? 2008 ixys corporation, all rights reserved ds99571f(05/08) polar tm power mosfet hiperfet tm n-channel enhancement mode avalanche rated fast intrinsic diode IXFN140N30P symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 300 v v gs(th) v ds = v gs , i d = 8ma 3.0 5.0 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss 25 a v gs = 0v t j = 125 c 1 ma r ds(on) v gs = 10v, i d = 70a, note 1 20 24 m v dss = 300v i d25 = 110a r ds(on) 24 m t rr 200 ns s g s d minibloc, sot-227 b e153432 g = gate d = drain s = source either source terminal at minibloc can be used as main or kelvin source symbol test conditions maximum ratings v dss t j = 25 c to 150 c 300 v v dgr t j = 25 c to 150 c, r gs = 1m 300 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 110 a i lrms external lead current limit 100 a i dm t c = 25 c, pulse width limited by t jm 300 a i a t c = 25 c70a e as t c = 25 c5j dv/dt i s i dm , v dd v dss ,t j 150 c 20 v/ns p d t c = 25 c 700 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c v isol 50/60 hz, rms t = 1min 2500 v~ i isol 1ma t = 1s 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.3/11.5 nm/lb.in. weight 30 g features ? fast intrinsic diode ? avalanche rated ? low r ds(on) and q g ? low package inductance advantages ? easy to mount ? space savings ? high power density applications ? dc-dc coverters ? battery chargers ? switched-mode and resonant-mode power supplies ? dc choppers ? ac and dc motor control ? uninterrupted power supplies ? high speed power switching applications
ixys reserves the right to change limits, test conditions, and dimensions. IXFN140N30P symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 70a, note 1 50 90 s c iss 14.8 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 1830 pf c rss 55 pf t d(on) 30 ns t r 30 ns t d(off) 100 ns t f 20 ns q g(on) 185 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 70a 72 nc q gd 60 nc r thjc 0.18 c/ w r thcs 0.05 c /w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0v 140 a i sm repetitive, pulse width limited by t jm 560 a v sd i f = 70a, v gs = 0v, note 1 1.3 v t rr 200 ns q rm 0.6 c i rm 6.0 a note 1: pulse test, t 300 s; duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 70a r g = 1 (external) i f = 25a, -di/dt = 100a/ s v r = 100v sot-227b outline
? 2008 ixys corporation, all rights reserved IXFN140N30P fig. 1. output characteristics @ 25oc 0 20 40 60 80 100 120 140 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v ds - volts i d - amperes v gs = 10v 8v 6v 5v 7v fig. 2. extended output characteristics @ 25oc 0 40 80 120 160 200 240 280 0 2 4 6 8 10 12 14 16 18 20 v ds - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 3. output characteristics @ 125oc 0 20 40 60 80 100 120 140 012345678 v ds - volts i d - amperes v gs = 10v 8v 7v 6v 5v fig. 4. r ds(on) normalized to i d = 70a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 140a i d = 70a fig. 5. r ds(on) normalized to i d = 70a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 0 40 80 120 160 200 240 280 i d - amperes r ds(on) - normalized t j = 125oc t j = 25oc v gs = 10v fig. 6. maximum drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 100 110 120 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes external lead current limit
ixys reserves the right to change limits, test conditions, and dimensions. IXFN140N30P fig. 7. input admittance 0 20 40 60 80 100 120 140 160 180 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 160 180 200 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 200 q g - nanocoulombs v gs - volts v ds = 150v i d = 70a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss ixys ref: f_140n30p(93)5-13-08-a fig. 12. forward-bias safe operating area 1 10 100 1,000 10 100 1000 v ds - volts i d - amperes 25s 1ms 100s r ds(on) limit 10ms dc t j = 150oc t c = 25oc single pulse
? 2008 ixys corporation, all rights reserved IXFN140N30P ixys ref: f_140n30p(93)5-13-08-b fig. 13. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
|
